Modeling of Dark Current in HgCdTe Infrared Detectors
Identifieur interne : 000886 ( Main/Repository ); précédent : 000885; suivant : 000887Modeling of Dark Current in HgCdTe Infrared Detectors
Auteurs : RBID : Pascal:14-0021562Descripteurs français
- Pascal (Inist)
- Modélisation, Etude théorique, Courant obscurité, Photodétecteur, Semiconducteur II-VI, Détecteur IR, Méthode élément fini, Article synthèse, Etat défaut, Bande interdite, Recombinaison Auger, Méthode analytique, Piège, Dépendance température, Lacune, Addition phosphore, Photodiode, Addition indium, Addition azote, Matériau dopé, Dopage, Simulation numérique, Ionisation choc, Effet tunnel, Durée vie porteur charge, 8560G, 8105D, 0757K, 8560D.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Analytical method, Auger recombination, Carrier lifetime, Dark current, Defect states, Doped materials, Doping, Energy gap, Finite element method, II-VI semiconductors, Impact ionization, Indium addition, Infrared detector, Modeling, Nitrogen addition, Numerical simulation, Phosphorus addition, Photodetector, Photodiode, Review, Temperature dependence, Theoretical study, Trap, Tunnel effect, Vacancy.
Abstract
This paper presents modeling work carried out using a finite-element modeling approach. The physical models implemented for HgCdTe infrared photodetectors are reviewed. In particular, generation-recombination models such as Shockley-Read-Hall through a trap level in a narrow bandgap and Auger recombination are included. These well-established models are described using widely published analytical expressions. This paper highlights both the unique set of trap parameters found to fit the dark current as a function of temperature and composition for mercury-vacancy p-type-doped photodiodes and their use in a finite-element code. An equivalent set of trap parameters is also proposed for indium n-type-doped material in a p-on-n photodiode simulated in three dimensions. Device simulations also include the impact ionization process to fine-tune the saturation dark current. Finally, excess dark current is also modeled with the help of nonlocal band-to-band tunneling, which requires no fitting parameters.
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Rothman</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Gravrand, O" uniqKey="Gravrand O">O. Gravrand</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0021562</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0021562 INIST</idno><idno type="RBID">Pascal:14-0021562</idno><idno type="wicri:Area/Main/Corpus">000295</idno><idno type="wicri:Area/Main/Repository">000886</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Analytical method</term><term>Auger recombination</term><term>Carrier lifetime</term><term>Dark current</term><term>Defect states</term><term>Doped materials</term><term>Doping</term><term>Energy gap</term><term>Finite element method</term><term>II-VI semiconductors</term><term>Impact ionization</term><term>Indium addition</term><term>Infrared detector</term><term>Modeling</term><term>Nitrogen addition</term><term>Numerical simulation</term><term>Phosphorus addition</term><term>Photodetector</term><term>Photodiode</term><term>Review</term><term>Temperature dependence</term><term>Theoretical study</term><term>Trap</term><term>Tunnel effect</term><term>Vacancy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Modélisation</term><term>Etude théorique</term><term>Courant obscurité</term><term>Photodétecteur</term><term>Semiconducteur II-VI</term><term>Détecteur IR</term><term>Méthode élément fini</term><term>Article synthèse</term><term>Etat défaut</term><term>Bande interdite</term><term>Recombinaison Auger</term><term>Méthode analytique</term><term>Piège</term><term>Dépendance température</term><term>Lacune</term><term>Addition phosphore</term><term>Photodiode</term><term>Addition indium</term><term>Addition azote</term><term>Matériau dopé</term><term>Dopage</term><term>Simulation numérique</term><term>Ionisation choc</term><term>Effet tunnel</term><term>Durée vie porteur charge</term><term>8560G</term><term>8105D</term><term>0757K</term><term>8560D</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper presents modeling work carried out using a finite-element modeling approach. The physical models implemented for HgCdTe infrared photodetectors are reviewed. In particular, generation-recombination models such as Shockley-Read-Hall through a trap level in a narrow bandgap and Auger recombination are included. These well-established models are described using widely published analytical expressions. This paper highlights both the unique set of trap parameters found to fit the dark current as a function of temperature and composition for mercury-vacancy p-type-doped photodiodes and their use in a finite-element code. An equivalent set of trap parameters is also proposed for indium n-type-doped material in a p-on-n photodiode simulated in three dimensions. Device simulations also include the impact ionization process to fine-tune the saturation dark current. Finally, excess dark current is also modeled with the help of nonlocal band-to-band tunneling, which requires no fitting parameters.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>42</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Modeling of Dark Current in HgCdTe Infrared Detectors</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials</s1></fA09><fA11 i1="01" i2="1"><s1>FERRON (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>ROTHMAN (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>GRAVRAND (O.)</s1></fA11><fA12 i1="01" i2="1"><s1>SIVANANTHAN (S.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>DHAR (N. K.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>CEA Grenoble, LETI, Minatec Campus, 17 Rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St.</s1><s2>Chicago, IL, 60607</s2><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Defense Advanced Research Projects Agency, 3701 North Fairfax Drive</s1><s2>Arlington, VA, 22203-1714</s2><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA20><s1>3303-3308</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000507420230430</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0021562</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper presents modeling work carried out using a finite-element modeling approach. The physical models implemented for HgCdTe infrared photodetectors are reviewed. In particular, generation-recombination models such as Shockley-Read-Hall through a trap level in a narrow bandgap and Auger recombination are included. These well-established models are described using widely published analytical expressions. This paper highlights both the unique set of trap parameters found to fit the dark current as a function of temperature and composition for mercury-vacancy p-type-doped photodiodes and their use in a finite-element code. An equivalent set of trap parameters is also proposed for indium n-type-doped material in a p-on-n photodiode simulated in three dimensions. Device simulations also include the impact ionization process to fine-tune the saturation dark current. Finally, excess dark current is also modeled with the help of nonlocal band-to-band tunneling, which requires no fitting parameters.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="3"><s0>001B00G57K</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Modélisation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Modeling</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Modelización</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Etude théorique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Theoretical study</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Estudio teórico</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Courant obscurité</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Dark current</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Corriente obscuridad</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Photodétecteur</s0><s5>04</s5></fC03><fC03 i1="04" 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